BF570,215 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  BF570,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BF570,215 Collector- Emitter Voltage Vceo Max: 15 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V Emitter- Base Voltage Vebo: 4.5 V Frequency - Transition: 490MHz ID_COMPONENTS: 1949697 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.1 A Maximum Operating Frequency: 500 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: - Voltage - Collector Emitter Breakdown (max): 15V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 4.5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 500 MHz DC Collector/Base Gain hfe Min: 40 at 10 mA at 1 V DC Current Gain hFE Max: 40 at 10 mA at 1 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: BF570 T/R Other Names: 933814420215, BF570 T/R
• Количество страниц
  6 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  56,93 KB

BF570,215 datasheet скачать

BF570,215 datasheet